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News: 128GB, 20nm NAND Storage Announ...
December 12, 2011
Today, two leading producers of semiconductor chips, Intel and Micron have announced the development the world's first 128GB multi-layer cell NAND flash device. This technology is the first to use a 20-nanometer NAND process to fit this much storage capacity on such a small device. They have also announced today, that IM Flash Technologies, ...
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