May 16, 2011 Samsung Announces Production of Worlds First DDR 2.0 20nm NAND Flash
In a press release on May 12 2011 Samsung Electronics Co. Ltd. announced that it has begun production on the industrys most powerful and compact flash memory chip. The new NAND flash chip touts a high-performance toggle DDR (double data rate) 2.0 multi-level cell (MLC) memory chip and is achieved on a 20nm class technology that features 64 gigabit density. The chip is designed primarily for use in high performance applications such as tablets smartphones and solid state drives.

This 64 Gb MLC chip can transmit data at a bandwidth of up to 400 megabit per second (Mbps). This is a 10x increase over the current 40Mbps Single Data Rate NAND flash memory in use today and a 3x greater transmission over 133 Mbps DDR 1.0 32Gb NAND flash memory. Both the DDR 1.0 and DDR 2.0 NAND flash memory are industry firsts produced by Samsung.

Samsung has been a world leader for some time in NAND flash technology and production as the worldwide memory market continues to grow. According to IHS iSuppli demands for memory will grow from 11 billion 1 GB equivalent units in 2010 to 94 billion 1 GB equivalent units in 2015. New technological requirements needed by companies such as Apple will increase the need for these higher density chips from 3 percent in 2010 to 70 percent in 2012.

As consumers require their devices to do more and more companies like Samsung are dedicated to aggressively pursuing better and smaller technology to meet this need.

Reference
Samsung Electronics Co. Ltd. (2011)